技术参数

• Part Status Active
• Technology SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max) 2000 V
• Current - Average Rectified (Io) 157A
• Voltage - Forward (Vf) (Max) @ If 1.75 V @ 80 A
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Current - Reverse Leakage @ Vr 1.2 A @ 2000 V
• Capacitance @ Vr, F 9100pF @ 1V, 100kHz
• Grade -
• Qualification -
• Mounting Type Through Hole
• Package / Case TO-247-4 Variant
• Supplier Device Package PG-TO247-U04
• Operating Temperature - Junction -55°C ~ 175°C
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.10.0080