技术参数

• Part Status Obsolete
• Transistor Type PNP
• Current - Collector (Ic) (Max) 50 mA
• Voltage - Collector Emitter Breakdown (Max) 120 V
• Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
• Current - Collector Cutoff (Max) 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V
• Power - Max 300 mW
• Operating Temperature 150°C (TJ)
• Mounting Type Through Hole
• Package / Case SC-72 Formed Leads
• Supplier Device Package SPT
• RoHS Status ROHS3 Compliant
• REACH Status REACH Unaffected
• HTSUS 8541.29.0075