技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 6V
• Frequency - Transition 12GHz
• Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
• Gain 10dB
• Power - Max 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 30mA, 3V
• Current - Collector (Ic) (Max) 100mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case TO-253-4, TO-253AA
• Supplier Device Package SOT-143
• ECCN EAR99
• HTSUS 8541.21.0075