技术参数

• Part Status Active
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 6V
• Frequency - Transition 10.8GHz
• Noise Figure (dB Typ @ f) 1.1dB @ 900MHz
• Gain 11.9dB
• Power - Max 700mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA, 5V
• Current - Collector (Ic) (Max) 80mA
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case TO-236-3, SC-59, SOT-23-3
• Supplier Device Package 3-MPAK
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0075