技术参数

• Part Status Active
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 20V
• Frequency - Transition 2.5GHz
• Noise Figure (dB Typ @ f) -
• Gain -
• Power - Max 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V
• Current - Collector (Ic) (Max) 300mA
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package TO-92
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0075