技术参数

• Part Status Obsolete
• Transistor Type 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max) 10V
• Frequency - Transition 7GHz
• Noise Figure (dB Typ @ f) 1.4dB @ 1GHz
• Gain 12dB
• Power - Max 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 7mA, 3V
• Current - Collector (Ic) (Max) 65mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 6-TSSOP, SC-88, SOT-363
• Supplier Device Package SOT-363
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.21.0075