技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 3.3V
• Frequency - Transition 15GHz
• Noise Figure (dB Typ @ f) 1.2dB @ 2GHz
• Gain 14dB
• Power - Max 190mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 2V
• Current - Collector (Ic) (Max) 100mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case SC-82A, SOT-343
• Supplier Device Package SOT-343
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.21.0075