技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 10V
• Frequency - Transition 8GHz
• Noise Figure (dB Typ @ f) 1.9dB @ 2GHz
• Gain 7.5dB
• Power - Max 125mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 3V
• Current - Collector (Ic) (Max) 35mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case SOT-523
• Supplier Device Package SOT-523
• RoHS Status Not applicable
• ECCN EAR99
• HTSUS 8541.21.0075