技术参数

• Part Status Active
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) -
• Frequency - Transition 42GHz
• Noise Figure (dB Typ @ f) 1.5dB @ 12GHz
• Gain 11dB
• Power - Max 160mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA, 3V
• Current - Collector (Ic) (Max) 40mA
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 3-XFDFN
• Supplier Device Package PG-TSLP-3-10
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• HTSUS 0000.00.0000