技术参数

• Part Status Active
• Memory Type Volatile
• Memory Format DRAM
• Technology SDRAM - Mobile LPDDR4X
• Memory Size 8Gbit
• Memory Organization 256M x 32
• Memory Interface LVSTL_06
• Clock Frequency 1.866 GHz
• Write Cycle Time - Word, Page 18ns
• Access Time 3.5 ns
• Voltage - Supply 1.06V ~ 1.17V, 1.7V ~ 1.95V
• Operating Temperature -40°C ~ 105°C (TC)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 200-TFBGA
• Supplier Device Package 200-TFBGA (10x14.5)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 3 (168 Hours)