技术参数
- Part Status Active
- Memory Type Non-Volatile
- Memory Format FLASH
- Technology FLASH - NAND (SLC)
- Memory Size 2Gbit
- Memory Organization 256M x 8
- Memory Interface ONFI
- Write Cycle Time - Word, Page 35ns
- Access Time 25 ns
- Voltage - Supply 1.7V ~ 1.95V
- Operating Temperature -40°C ~ 85°C (TA)
- Grade -
- Qualification -
- Mounting Type Surface Mount
- Package / Case 63-VFBGA
- Supplier Device Package 63-VFBGA (9x11)
- RoHS Status ROHS3 Compliant
- Moisture Sensitivity Level (MSL) 3 (168 Hours)


