Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual) Common Drain
• FET Feature -
• Drain to Source Voltage (Vdss) 12V
• Current - Continuous Drain (Id) @ 25°C 9A (Ta)
• Rds On (Max) @ Id, Vgs 5.5mOhm @ 4.5A, 4.5V
• Vgs(th) (Max) @ Id 1.4V @ 260µA
• Gate Charge (Qg) (Max) @ Vgs 15nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds 1810pF @ 10V
• Power - Max 500mW (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 6-XFLGA, CSP
• Supplier Device Package 6-CSP (1.24x1.89)