Technical Details

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 4 N-Channel (Three Level Inverter)
• FET Feature -
• Drain to Source Voltage (Vdss) 1700V (1.7kV), 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 64A (Tc), 89A (Tc)
• Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id 3.2V @ 2.5mA, 2.8V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs 178nC @ 20V, 232nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 1000V, 3020pF @ 1000V
• Power - Max 319W (Tc), 395W (Tc)
• Operating Temperature -40°C ~ 175°C (TJ)
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package -