Technical Details

• Part Status Obsolete
• Transistor Type NPN - Pre-Biased
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Resistors Included R1 and R2
• Resistor - Base (R1) 4.7 kOhms
• Resistor - Emitter Base (R2) 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max) 1µA
• Power - Max 500 mW
• Mounting Type Through Hole
• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Supplier Device Package TO-92-3