Technical Details

• Part Status Obsolete
• FET Type P-Channel
• Voltage - Breakdown (V(BR)GSS) 30 V
• Drain to Source Voltage (Vdss) 30 V
• Current - Drain (Idss) @ Vds (Vgs=0) 1.5 mA @ 15 V
• Voltage - Cutoff (VGS off) @ Id 800 mV @ 10 nA
• Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V (VGS)
• Resistance - RDS(On) 300 Ohms
• Power - Max 400 mW
• Operating Temperature 150°C (TJ)
• Mounting Type Through Hole
• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Supplier Device Package TO-92-3