Technical Details

• Part Status Obsolete
• Transistor Type NPN - Pre-Biased + Diode
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Resistors Included R1 and R2
• Resistor - Base (R1) 4.7 kOhms
• Resistor - Emitter Base (R2) 4.7 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max) 500nA
• Frequency - Transition 200 MHz
• Power - Max 300 mW
• Mounting Type Through Hole
• Package / Case SC-72 Formed Leads
• Supplier Device Package SPT
• RoHS Status ROHS3 Compliant
• REACH Status REACH Unaffected
• HTSUS 8541.21.0075