Technical Details

• Part Status Active
• Transistor Type NPN - Pre-Biased + Diode
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 12 V
• Resistors Included R1 and R2
• Resistor - Base (R1) 1 kOhms
• Resistor - Emitter Base (R2) 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
• Current - Collector Cutoff (Max) 500nA
• Frequency - Transition 260 MHz
• Power - Max 150 mW
• Mounting Type Surface Mount
• Package / Case SC-75, SOT-416
• Supplier Device Package EMT3
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0075