Technical Details

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 4 N-Channel (Full Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C 238A (Tc)
• Rds On (Max) @ Id, Vgs 11.3mOhm @ 120A, 20V
• Vgs(th) (Max) @ Id 3.2V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs 712nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 1000V
• Power - Max 1.114kW (Tc)
• Operating Temperature -40°C ~ 175°C (TJ)
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package -