Technical Details

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 2 N Channel (Phase Leg)
• FET Feature -
• Drain to Source Voltage (Vdss) 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C 353A (Tc)
• Rds On (Max) @ Id, Vgs 7.5mOhm @ 180A, 20V
• Vgs(th) (Max) @ Id 3.3V @ 15mA
• Gate Charge (Qg) (Max) @ Vgs 1068nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds 19800pF @ 1000V
• Power - Max 1.642kW (Tc)
• Operating Temperature -40°C ~ 175°C (TJ)
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package -