- Product Model A3G26H200W17SR3
- Brand NXP USA Inc.
- RoHS Yes
- Description RF MOSFET GAN 48V NI780
- Categories RF FETs, MOSFETs
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PDF
- In Stock
Technical Details
- Part Status Obsolete
- Technology GaN
- Configuration -
- Frequency 2.496GHz ~ 2.69GHz
- Gain 14.2dB
- Voltage - Test 48 V
- Current Rating (Amps) -
- Noise Figure -
- Current - Test 120 mA
- Power - Output 34W
- Voltage - Rated 125 V
- Package / Case NI-780S-4S2S
- Supplier Device Package NI-780S-4S2S
- RoHS Status ROHS3 Compliant
- REACH Status REACH Unaffected
- ECCN EAR99
- HTSUS 8541.29.0075
