Technical Details

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 100 V
• Current - Continuous Drain (Id) @ 25°C 6A (Tc)
• Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 40W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-220AB
• Package / Case TO-220-3