Technical Details

• Part Status Obsolete
• Transistor Type NPN - Pre-Biased
• Current - Collector (Ic) (Max) 2 A
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Resistors Included R1 and R2
• Resistor - Base (R1) 1 kOhms
• Resistor - Emitter Base (R2) 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V
• Vce Saturation (Max) @ Ib, Ic -
• Current - Collector Cutoff (Max) 100nA (ICBO)
• Power - Max 1 W
• Grade -
• Qualification -
• Mounting Type Through Hole
• Package / Case 3-SSIP
• Supplier Device Package -