Technical Details

• Part Status Obsolete
• Transistor Type NPN - Pre-Biased
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Resistors Included R1 and R2
• Resistor - Base (R1) 510 Ohms
• Resistor - Emitter Base (R2) 5.1 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max) 500nA
• Frequency - Transition 150 MHz
• Power - Max 200 mW
• Mounting Type Surface Mount
• Package / Case TO-236-3, SC-59, SOT-23-3
• Supplier Device Package Mini3-G1
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0075