Technical Details

• Part Status Obsolete
• Transistor Type 1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max) 100mA, 500mA
• Voltage - Collector Emitter Breakdown (Max) 50V, 40V
• Resistor - Base (R1) 22kOhms
• Resistor - Emitter Base (R2) 22kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V / 150 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
• Current - Collector Cutoff (Max) 1µA
• Frequency - Transition 300MHz
• Power - Max 300mW
• Mounting Type Surface Mount
• Package / Case SOT-563, SOT-666
• Supplier Device Package SOT-666