- Product Model A2G35S200-01SR3
- Brand NXP USA Inc.
- RoHS Yes
- Description RF MOSFET GAN HEMT 48V NI400
- Categories RF FETs, MOSFETs
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PDF
- In Stock
Technical Details
- Part Status Obsolete
- Technology GaN HEMT
- Frequency 3.4GHz ~ 3.6GHz
- Gain 16.1dB
- Voltage - Test 48 V
- Current Rating (Amps) -
- Noise Figure -
- Current - Test 291 mA
- Power - Output 180W
- Voltage - Rated 125 V
- Mounting Type Surface Mount
- Package / Case NI-400S-2S
- Supplier Device Package NI-400S-2S
- RoHS Status ROHS3 Compliant
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- ECCN DISC 3A001B3
- HTSUS 8541.29.0075


