Technical Details

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel, Common Drain
• FET Feature -
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 6.6A, 4.7A
• Rds On (Max) @ Id, Vgs 36mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 19.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 25V
• Power - Max 3.13W
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case TO-252-5, DPAK (4 Leads + Tab)
• Supplier Device Package TO-252-4L