Technical Details

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration 2 N and 2 P-Channel (Full Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 5.5A, 4.1A
• Rds On (Max) @ Id, Vgs 33mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 960pF @ 25V
• Power - Max 1.38W
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package 8-SO