Technical Details

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 40V
• Current - Continuous Drain (Id) @ 25°C 8.8A, 7.3A
• Rds On (Max) @ Id, Vgs 26.5mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 11.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 15V
• Power - Max 3.57W
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-PowerTDFN
• Supplier Device Package PQFN (5x6)