Technical Details

• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 1.8 V, 4V
• Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 4V
• Vgs(th) (Max) @ Id 1.1V @ 1mA
• Vgs (Max) ±10V
• Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 700mW (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package MINI3-G3-B
• Package / Case TO-236-3, SC-59, SOT-23-3