Technical Details

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 15A (Ta), 39A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 7.1mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id 3V @ 1.45mA
• Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 4.5 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 2.4W (Ta), 19W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package HSO8-F4-B
• Package / Case 8-PowerSMD, Flat Leads