Technical Details

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 15V
• Frequency - Transition 1GHz
• Noise Figure (dB Typ @ f) 3.3dB @ 836MHz
• Gain 11.6dB
• Power - Max 6.4W
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 250mA, 3V
• Current - Collector (Ic) (Max) 1.2A
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package 8-SOIC-EP