Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 40 V
• Current - Continuous Drain (Id) @ 25°C 35A (Ta), 219A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
• Rds On (Max) @ Id, Vgs 1.15mOhm @ 50A, 15V
• Vgs(th) (Max) @ Id 3.15V @ 46µA
• Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 20 V
• FET Feature -
• Power Dissipation (Max) 3W (Ta), 115W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package PG-TDSON-8
• Package / Case 8-PowerTDFN