Technical Details

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1200 V
• Current - Continuous Drain (Id) @ 25°C 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Rds On (Max) @ Id, Vgs 69mOhm @ 13A, 18V
• Vgs(th) (Max) @ Id 5.1V @ 4.1mA
• Gate Charge (Qg) (Max) @ Vgs 30 nC @ 18 V
• Vgs (Max) +23V, -7V
• Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 800 V
• FET Feature -
• Power Dissipation (Max) 182W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package PG-TO247-4-8
• Package / Case TO-247-4