Technical Details

• Part Status Active
• Technology SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max) 1200 V
• Current - Average Rectified (Io) 131A
• Voltage - Forward (Vf) (Max) @ If 1.8 V @ 50 A
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Current - Reverse Leakage @ Vr 400 µA @ 1.2 kV
• Capacitance @ Vr, F 2890pF @ 1V, 100kHz
• Grade -
• Qualification -
• Mounting Type Through Hole
• Package / Case TO-247-2
• Supplier Device Package PG-TO247-2-U01
• Operating Temperature - Junction -55°C ~ 175°C