Technical Details

• Part Status Active
• Technology SiCFET (Silicon Carbide)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) 650V
• Current - Continuous Drain (Id) @ 25°C 48.1A (Tc)
• Rds On (Max) @ Id, Vgs 62mOhm @ 18.2A, 18V
• Vgs(th) (Max) @ Id 5.6V @ 3.7mA
• Gate Charge (Qg) (Max) @ Vgs 22nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds 790pF @ 400V
• Power - Max 237W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-PowerSFN
• Supplier Device Package PG-HSOF-8-2