Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 6.5A (Tc)
• Rds On (Max) @ Id, Vgs 210mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 105pF @ 50V
• Power - Max 2W (Ta), 13W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-PowerTDFN
• Supplier Device Package 8-HSOP