Technical Details

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 2 N-Channel (Half Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 2000V (2kV)
• Current - Continuous Drain (Id) @ 25°C 160A (Tj)
• Rds On (Max) @ Id, Vgs 8.1mOhm @ 160A, 18V
• Vgs(th) (Max) @ Id 5.15V @ 112mA
• Gate Charge (Qg) (Max) @ Vgs 780nC @ 3V
• Input Capacitance (Ciss) (Max) @ Vds 24100pF @ 1.2kV
• Power - Max -
• Operating Temperature -40°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package -