Technical Details

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 3300 V
• Current - Continuous Drain (Id) @ 25°C 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Rds On (Max) @ Id, Vgs 105mOhm @ 30A, 20V
• Vgs(th) (Max) @ Id 2.97V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs 55 nC @ 20 V
• Vgs (Max) +23V, -10V
• Input Capacitance (Ciss) (Max) @ Vds 3462 pF @ 2.4 kV
• FET Feature -
• Power Dissipation (Max) 381W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-247-4
• Package / Case TO-247-4