Technical Details

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1200 V
• Current - Continuous Drain (Id) @ 25°C 68A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
• Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id 2.7V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V
• Vgs (Max) +23V, -10V
• Input Capacitance (Ciss) (Max) @ Vds 1962 pF @ 1000 V
• FET Feature -
• Power Dissipation (Max) 338W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package TO-268
• Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA