Technical Details

• Part Status Active
• Technology SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max) 2000 V
• Current - Average Rectified (Io) 35A
• Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Current - Reverse Leakage @ Vr 150 µA @ 2 kV
• Capacitance @ Vr, F 1140pF @ 1V, 100kHz
• Grade -
• Qualification -
• Mounting Type Through Hole
• Package / Case TO-247-2
• Supplier Device Package PG-TO247-2-U01
• Operating Temperature - Junction -55°C ~ 175°C